| 2" GaN Templetes | | Item | GaN-T-N | GaN-T-S | | Dimensions | 2" | 2" | | Thickness | 20um, 30um | 30um, 90um | | Orientation | C-axis(0001) +/-1 deg. | | Conduction Type | N-type | Semi-Insulating | | Pesistivity (300K) | <0.05 Ω.cm | >106 Ω.cm | | Dislocation Density | Less than 1E18 cm-2 | | Substrate structure | Thick GaN on sapphire (0001) | | Useable Surface Area | >90% | | Package | Packaged in a class 100 clean room environment, in cassettes of 25pcs or single wafer containers, under a nitrogen atmosphere.
|
|
