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GaAs Semi-Conducting Type (砷化鎵晶片) GaAs Semi-Conducting Type (砷化鎵晶片) http://www.inlead.com.tw/product_1131570.html GaAs Semi-Conducting Type Growth Method VGF VGF VGF VGF Dopant Si (N-type) Si (N-type) Si (N-type) Si (N-type) Zn (P-type) Zn (P-type) Zn (P-type) Zn (P-type) Wafer Shape 2" 3" 4" 6" Diameter (mm) 50.8+/-0.3 76.2+/-0.3 100+/-0.3 150+/-0.3 Surface Orientation (100)+/-0.5 deg. (100)+/-0.5 deg. (100)+/-0.5 deg. (100)+/-0.5 deg. Carrier Concentration(cm-3) (0.8-~4)E18 (N-type) (0.8-~4)E18 (N-type) (0.8-~4)E18 (N-type) (0.8-~4)E18 (N-type) (0.5~5)E19 (P-type) (0.5~5)E19 (P-type) (0.5~5)E19 (P-type) (0.5~5)E19 (P-type) Mobility (cm2/V.S.) (1~2.5)E3 (N-type) (1~2.5)E3 (N-type) (1~2.5)E3 (N-type) (1~2.5)E3 (N-type) (50~120) (P-type) (50~120) (P-type) (50~120) (P-type) (50~120) (P-type) Etch Pitch Density(cm2) (100~5000) (N-type) (100~5000) (N-type) (100~5000) (N-type) (100~5000) (N-type) (3000~5000) (P-type) (3000~5000) (P-type) (3000~5000) (P-type) (3000~5000) (P-type) Thickness (um) 350+/-25 625+/-25 625+/-25 675+/-25 TTV (P/P) (um) ≦4 ≦4 ≦4 ≦4 TTV (P/E) (um) ≦10 ≦10 ≦10 ≦10 WARP (um) ≦10 ≦10 ≦10 ≦10 OF (mm) 17+/1 22+/-1 32.5+/-1 Notch OF / IF (mm) 7+/-1 12+/-1 18+/-1 NONE Polish E/E, P/E, P/P E/E, P/E, P/P E/E, P/E, P/P E/E, P/E, P/P Laser Mark(front side/ back side) Customization Customization Customization Customization Remark *E=Etched, P=Polished     1131570
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GaAs Semi-Conducting Type Growth Method VGF VGF VGF VGF Dopant Si (N-type) Si (N-type) Si (N-type) Si (N-type) Zn (P-type) Zn (P-type) Zn (P-type) Zn (P-type) Wafer Shape 2" 3" 4" 6" Diameter (mm) 50.8+/-0.3 76.2+/-0.3 100+/-0.3 150+/-0.3 Surface Orientation (100)+/-0.5 deg. (100)+/-0.5 deg. (100)+/-0.5 deg. (100)+/-0.5 deg. Carrier Concentration(cm-3) (0.8-~4)E18 (N-type) (0.8-~4)E18 (N-type) (0.8-~4)E18 (N-type) (0.8-~4)E18 (N-type) (0.5~5)E19 (P-type) (0.5~5)E19 (P-type) (0.5~5)E19 (P-type) (0.5~5)E19 (P-type) Mobility (cm2/V.S.) (1~2.5)E3 (N-type) (1~2.5)E3 (N-type) (1~2.5)E3 (N-type) (1~2.5)E3 (N-type) (50~120) (P-type) (50~120) (P-type) (50~120) (P-type) (50~120) (P-type) Etch Pitch Density(cm2) (100~5000) (N-type) (100~5000) (N-type) (100~5000) (N-type) (100~5000) (N-type) (3000~5000) (P-type) (3000~5000) (P-type) (3000~5000) (P-type) (3000~5000) (P-type) Thickness (um) 350+/-25 625+/-25 625+/-25 675+/-25 TTV (P/P) (um) ≦4 ≦4 ≦4 ≦4 TTV (P/E) (um) ≦10 ≦10 ≦10 ≦10 WARP (um) ≦10 ≦10 ≦10 ≦10 OF (mm) 17+/1 22+/-1 32.5+/-1 Notch OF / IF (mm) 7+/-1 12+/-1 18+/-1 NONE Polish E/E, P/E, P/P E/E, P/E, P/P E/E, P/E, P/P E/E, P/E, P/P Laser Mark(front side/ back side) Customization Customization Customization Customization Remark *E=Etched, P=Polished    
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TWD http://schema.org/InStock http://www.inlead.com.tw/product_1131570.html 2023-03-30 0
GaAs Semi-Conducting Type (砷化鎵晶片)
GaAs Semi-Insulating Type (砷化鎵晶片) GaAs Semi-Insulating Type (砷化鎵晶片) http://www.inlead.com.tw/product_1131571.html GaAs Semi-Insulating Type Growth Method VGF VGF VGF VGF Dopant Carbon Carbon Carbon Carbon Wafer Shape 2" 3" 4" 6" Diameter (mm) 50.8+/-0.3 76.2+/-0.3 100+/-0.3 150+/-0.3 Surface Orientation (100)+/-0.5 deg. (100)+/-0.5 deg. (100)+/-0.5 deg. (100)+/-0.5 deg. Resistivity (Ω.cm) ≧1E7 ≧1E7 ≧1E7 ≧1E7 Mobility (cm2/V.S.) ≧5,000 ≧5,000 ≧5,000 ≧5,000 Etch Pitch Density(cm2) (1,500~5,000) (1,500~5,000) (1,500~5,000) (1,500~5,000) Thickness (um) 350+/-25 625+/-25 625+/-25 675+/-25 TTV (P/P) (um) ≦4 ≦4 ≦4 ≦4 TTV (P/E) (um) ≦10 ≦10 ≦10 ≦10 WARP (um) ≦10 ≦10 ≦10 ≦10 OF (mm) 17+/1 22+/-1 32.5+/-1 Notch OF / IF (mm) 7+/-1 12+/-1 18+/-1 NONE Polish E/E, P/E, P/P E/E, P/E, P/P E/E, P/E, P/P E/E, P/E, P/P Laser Mark(front side/ back side) Customization Customization Customization Customization Remark *E=Etched, P=Polished 1131571
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GaAs Semi-Insulating Type Growth Method VGF VGF VGF VGF Dopant Carbon Carbon Carbon Carbon Wafer Shape 2" 3" 4" 6" Diameter (mm) 50.8+/-0.3 76.2+/-0.3 100+/-0.3 150+/-0.3 Surface Orientation (100)+/-0.5 deg. (100)+/-0.5 deg. (100)+/-0.5 deg. (100)+/-0.5 deg. Resistivity (Ω.cm) ≧1E7 ≧1E7 ≧1E7 ≧1E7 Mobility (cm2/V.S.) ≧5,000 ≧5,000 ≧5,000 ≧5,000 Etch Pitch Density(cm2) (1,500~5,000) (1,500~5,000) (1,500~5,000) (1,500~5,000) Thickness (um) 350+/-25 625+/-25 625+/-25 675+/-25 TTV (P/P) (um) ≦4 ≦4 ≦4 ≦4 TTV (P/E) (um) ≦10 ≦10 ≦10 ≦10 WARP (um) ≦10 ≦10 ≦10 ≦10 OF (mm) 17+/1 22+/-1 32.5+/-1 Notch OF / IF (mm) 7+/-1 12+/-1 18+/-1 NONE Polish E/E, P/E, P/P E/E, P/E, P/P E/E, P/E, P/P E/E, P/E, P/P Laser Mark(front side/ back side) Customization Customization Customization Customization Remark *E=Etched, P=Polished
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TWD http://schema.org/InStock http://www.inlead.com.tw/product_1131571.html 2023-03-30 0
GaAs Semi-Insulating Type (砷化鎵晶片)

Home ﹥ Products > 砷化鎵晶片 GaAs Substrate

GaAs Semi-Conducting Type (砷化鎵晶片)
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GaAs Semi-Conducting Type (砷化鎵晶片)

GaAs Semi-Conducting Type

Growth Method VGF VGF VGF VGF
Dopant Si (N-type) Si (N-type) Si (N-type) Si (N-type)
Zn (P-type) Zn (P-type) Zn (P-type) Zn (P-type)
Wafer Shape 2" 3" 4" 6"
Diameter (mm) 50.8+/-0.3 76.2+/-0.3 100+/-0.3 150+/-0.3
Surface Orientation (100)+/-0.5 deg. (100)+/-0.5 deg. (100)+/-0.5 deg. (100)+/-0.5 deg.
Carrier Concentration(cm-3) (0.8-~4)E18 (N-type) (0.8-~4)E18 (N-type) (0.8-~4)E18 (N-type) (0.8-~4)E18 (N-type)
(0.5~5)E19 (P-type) (0.5~5)E19 (P-type) (0.5~5)E19 (P-type) (0.5~5)E19 (P-type)
Mobility (cm2/V.S.) (1~2.5)E3 (N-type) (1~2.5)E3 (N-type) (1~2.5)E3 (N-type) (1~2.5)E3 (N-type)
(50~120) (P-type) (50~120) (P-type) (50~120) (P-type) (50~120) (P-type)
Etch Pitch Density(cm2) (100~5000) (N-type) (100~5000) (N-type) (100~5000) (N-type) (100~5000) (N-type)
(3000~5000) (P-type) (3000~5000) (P-type) (3000~5000) (P-type) (3000~5000) (P-type)
Thickness (um) 350+/-25 625+/-25 625+/-25 675+/-25
TTV (P/P) (um) ≦4 ≦4 ≦4 ≦4
TTV (P/E) (um) ≦10 ≦10 ≦10 ≦10
WARP (um) ≦10 ≦10 ≦10 ≦10
OF (mm) 17+/1 22+/-1 32.5+/-1 Notch
OF / IF (mm) 7+/-1 12+/-1 18+/-1 NONE
Polish E/E, P/E, P/P E/E, P/E, P/P E/E, P/E, P/P E/E, P/E, P/P
Laser Mark(front side/ back side) Customization Customization Customization Customization
Remark *E=Etched, P=Polished

 

 
GaAs Semi-Insulating Type (砷化鎵晶片)
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GaAs Semi-Insulating Type (砷化鎵晶片)

GaAs Semi-Insulating Type

Growth Method VGF VGF VGF VGF
Dopant Carbon Carbon Carbon Carbon
Wafer Shape 2" 3" 4" 6"
Diameter (mm) 50.8+/-0.3 76.2+/-0.3 100+/-0.3 150+/-0.3
Surface Orientation (100)+/-0.5 deg. (100)+/-0.5 deg. (100)+/-0.5 deg. (100)+/-0.5 deg.
Resistivity (Ω.cm) ≧1E7 ≧1E7 ≧1E7 ≧1E7
Mobility (cm2/V.S.) ≧5,000 ≧5,000 ≧5,000 ≧5,000
Etch Pitch Density(cm2) (1,500~5,000) (1,500~5,000) (1,500~5,000) (1,500~5,000)
Thickness (um) 350+/-25 625+/-25 625+/-25 675+/-25
TTV (P/P) (um) ≦4 ≦4 ≦4 ≦4
TTV (P/E) (um) ≦10 ≦10 ≦10 ≦10
WARP (um) ≦10 ≦10 ≦10 ≦10
OF (mm) 17+/1 22+/-1 32.5+/-1 Notch
OF / IF (mm) 7+/-1 12+/-1 18+/-1 NONE
Polish E/E, P/E, P/P E/E, P/E, P/P E/E, P/E, P/P E/E, P/E, P/P
Laser Mark(front side/ back side) Customization Customization Customization Customization
Remark *E=Etched, P=Polished