| InP Substrate |
| Growth Method |
VGF |
VGF |
VGF |
| Dopant |
S/Sn/Undoped (N-type) |
S/Sn/Undoped (N-type) |
S/Sn/Undoped (N-type) |
| Zn (P-type) |
Zn (P-type) |
Zn (P-type) |
| Wafer Shape |
2" |
3" |
4" |
| Diameter (mm) |
50.8+/-0.3 |
76.2+/-0.3 |
100+/-0.3 |
| Surface Orientation |
(100)+/-0.5 deg. |
(100)+/-0.5 deg. |
(100)+/-0.5 deg. |
| Carrier Concentration(cm-3) |
(0.8-~8)E18 (S/Sn) |
(0.8-~8)E18 (S/Sn) |
(0.8-~8)E18 (S/Sn) |
| (1~10)E15 (Undoped) |
(1~10)E15 (Undoped) |
(1~10)E15 (Undoped) |
| (0.8~8)E18 (Zn) |
(0.8~8)E18 (Zn) |
(0.8~8)E18 (Zn) |
| Mobility (cm2/V.S.) |
(1~2.5)E3 (S/Sn) |
(1~2.5)E3 (S/Sn) |
(1~2.5)E3 (S/Sn) |
| (3~5)E3 (undoped) |
(3~5)E3 (undoped) |
(3~5)E3 (undoped) |
| (50~120) (Zn) |
(50~120) (Zn) |
(50~120) (Zn) |
| Etch Pitch Density(cm2) |
(100~5,000) (S/Sn) |
(100~5,000) (S/Sn) |
(100~5,000) (S/Sn) |
| ≦5,000 (undoped) |
≦5,000 (undoped) |
≦5,000 (undoped) |
| ≦500 (Zn) |
≦500 (Zn) |
≦500 (Zn) |
| Thickness (um) |
350+/-25 |
625+/-25 |
625+/-25 |
| TTV (P/P) (um) |
≦10 |
≦10 |
≦10 |
| TTV (P/E) (um) |
≦10 |
≦15 |
≦15 |
| WARP (um) |
≦15 |
≦10 |
≦10 |
| OF (mm) |
17+/1 |
≦15 |
≦15 |
| OF / IF (mm) |
7+/-1 |
12+/-1 |
18+/-1 |
| Polish |
E/E, P/E, P/P |
E/E, P/E, P/P |
E/E, P/E, P/P |
| Laser Mark(front side/ back side) |
Customization |
Customization |
Customization |
| Remark |
*E=Etched, P=Polished |
|
