| 1. Dimension |
|
| Diameter: |
50.8±0.25mm |
| Thickness: |
430±15um |
| Primary Flat: |
16±1mm |
| 2.Orientation |
|
| Surface-cut: |
C plane : Tilt 0.2°±0.1° in M axis |
| Primary Flat: |
A plane : 0°±0.25° |
| 3.Flatness |
|
| Bow: |
0 ~ (-6)um |
| Warp: |
≦15um |
| Total Thickness Variation (TTV): |
≦7um |
| 4.Surface Condition |
|
| Roughness: |
|
| Front-side Surface : |
Ra≦2A ( Epi-ready Polished) |
| Back-side Surface : |
Ra=1.0±0.2um (Finely Ground) |
| Cleanliness |
No particles and fingerprints |
| 5.Material Quality |
High-purity mono-crystal Al 2O3 |
| 6.Package |
Wafers are packed in cleaned wafer cassettes containing 25 wafers under clean room environment. |
| 7.Trace Ability |
Wafers shall be traceable with respect to cassette number. The wafer box should be marked with a removable label showing the date, the cassette number and the quantity. |
| 8.Laser Mark |
Position as the below figure, marking in wafer front-side. Alphabet size : 0.8 x 0.8mm. |
