| Ge Substrate |
| Growth Method |
VGF |
VGF |
VGF |
| Dopant |
As (N-type) |
As (N-type) |
As (N-type) |
| Ga (P-type) |
Ga (P-type) |
Ga (P-type) |
| Wafer Shape |
2" |
4" |
6" |
| Diameter (mm) |
50.8+/-0.3 |
100+/-0.3 |
150+/-0.3 |
| Surface Orientation |
(100)+/-0.5 deg. |
(100)+/-0.5 deg. |
(100)+/-0.5 deg. |
| Resistivity (Ω.cm) |
(0.05~0.25) (N-type) |
(0.05~0.25) (N-type) |
(0.05~0.25) (N-type) |
| (0.005~0.04) (P-type) |
(0.005~0.04) (P-type) |
(0.005~0.04) (P-type) |
| Etch Pitch Density(cm2) |
≦300 |
≦300 |
≦300 |
| Thickness (um) |
175+/-25 |
175+/-25 |
250+/-25 |
| TTV (P/P) (um) |
≦15 |
≦15 |
≦15 |
| WARP (um) |
≦25 |
≦25 |
≦25 |
| OF (mm) |
17+/1 |
32.5+/-1 |
Notch |
| OF / IF (mm) |
7+/-1 |
18+/-1 |
NONE |
| Polish |
E/E, P/E, P/P |
E/E, P/E, P/P |
E/E, P/E, P/P |
| Backside Ra (um) |
<0.1 |
<0.1 |
<0.1 |
| Laser Mark(front side/ back side) |
Customization |
Customization |
Customization |
| Remark |
*E=Etched, P=Polished |
|
