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InP Semi-Conducting Type (磷化銦晶片)

InP Semi-Conducting Type

InP Substrate
Growth Method	VGF	VGF	VGF
Dopant	S/Sn/Undoped (N-type)	S/Sn/Undoped (N-type)	S/Sn/Undoped (N-type)
Dopant	Zn (P-type)	Zn (P-type)	Zn (P-type)
Wafer Shape	2"	3"	4"
Diameter (mm)	50.8+/-0.3	76.2+/-0.3	100+/-0.3
Surface Orientation	(100)+/-0.5 deg.	(100)+/-0.5 deg.	(100)+/-0.5 deg.
Carrier Concentration(cm-3)	(0.8-~8)E18 (S/Sn)	(0.8-~8)E18 (S/Sn)	(0.8-~8)E18 (S/Sn)
	(1~10)E15 (Undoped)	(1~10)E15 (Undoped)	(1~10)E15 (Undoped)
	(0.8~8)E18 (Zn)	(0.8~8)E18 (Zn)	(0.8~8)E18 (Zn)
Mobility (cm2/V.S.)	(1~2.5)E3 (S/Sn)	(1~2.5)E3 (S/Sn)	(1~2.5)E3 (S/Sn)
	(3~5)E3 (undoped)	(3~5)E3 (undoped)	(3~5)E3 (undoped)
	(50~120) (Zn)	(50~120) (Zn)	(50~120) (Zn)
Etch Pitch Density(cm2)	(100~5,000) (S/Sn)	(100~5,000) (S/Sn)	(100~5,000) (S/Sn)
	≦5,000 (undoped)	≦5,000 (undoped)	≦5,000 (undoped)
	≦500 (Zn)	≦500 (Zn)	≦500 (Zn)
Thickness (um)	350+/-25	625+/-25	625+/-25
TTV (P/P) (um)	≦10	≦10	≦10
TTV (P/E) (um)	≦10	≦15	≦15
WARP (um)	≦15	≦10	≦10
OF (mm)	17+/1	≦15	≦15
OF / IF (mm)	7+/-1	12+/-1	18+/-1
Polish	E/E, P/E, P/P	E/E, P/E, P/P	E/E, P/E, P/P
Laser Mark(front side/ back side)	Customization	Customization	Customization
Remark	*E=Etched, P=Polished

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InP Semi-Insulating Type

InP Substrate
Growth Method	VGF	VGF	VGF
Dopant	Iron (FE)	Iron (FE)	Iron (FE)
Wafer Shape	2"	3"	4"
Diameter (mm)	50.8+/-0.3	76.2+/-0.3	100+/-0.3
Surface Orientation	(100)+/-0.5 deg.	(100)+/-0.5 deg.	(100)+/-0.5 deg.
Resistivity (Ω.cm)	≧0.5E7	≧0.5E7	≧0.5E7
Mobility (cm2/V.S.)	≧ 1,000	≧ 1,000	≧ 1,000
Etch Pitch Density(cm2)	1,500~5,000	1,500~5,000	1,500~5,000
Thickness (um)	350+/-25	625+/-25	625+/-25
TTV (P/P) (um)	≦10	≦10	≦10
TTV (P/E) (um)	≦10	≦15	≦15
WARP (um)	≦15	≦10	≦10
OF (mm)	17+/1	≦15	≦15
OF / IF (mm)	7+/-1	12+/-1	18+/-1
Polish	E/E, P/E, P/P	E/E, P/E, P/P	E/E, P/E, P/P
Laser Mark(front side/ back side)	Customization	Customization	Customization
Remark	*E=Etched, P=Polished