| 2" Free-Standing GaN substrates |
| Item | GaN-FS-N | GaN-FS-SI |
| Dimensions | 50.8mm ± 1mm |
| Marco Defect Density | A Level | ≦ 2 cm-2 |
| B Level | > 2 cm-2 |
| Thickness | 260 ± 20um |
| Orientation | C-axis(0001) +/- 0.5 deg. |
| Orientation Flat | (1-100) ± 0.5 deg., 16.0 ± 1.0mm |
| Secondary Orientation Flat | (11-20) ± 3 deg., 8.0 ± 1.0mm |
| TTV | ≦ 15um |
| BOW | ≦ 20um |
| Conduction Type | N-type | Semi-Insulating |
| Pesistivity (300K) | < 0.5 Ω.cm | > 106 Ω.cm |
| Dislocation Density | Less than 5 x 106 cm-2 |
| Useable Surface Area | >90% |
| Polishing | Front Surface: Ra<0.2nm. Epi-ready | Front Surface: Ra<0.2nm. Epi-ready |
| Back Surface: 1. Fine Ground | Back Surface: 1. Fine Ground |
| 2. Rough grinded | 2. Rough grinded |
| Package | Packaged in a class 100 clean room environment, in cassettes of 25pcs or single wafer containers, under a nitrogen atmosphere. |
