| Free-Standing GaN substrates (customized size) | | Item | GaN-FS-5 | GaN-FS-10 | GaN-FS-15 | | Dimensions | 5.0mm x 5.5mm | 10.0mm x 10.5mm | 14.0mm x 15.0mm | | Marco Defect Density | A Level : 0 cm-2 | | B Level : 1~3 cm-2 | | C Level : ≧4 cm-2 | | Thickness | 230 ± 20um, 280 ± 20um | | Orientation | C-axis(0001) ± 0.5 deg. | | TTV | ≦ 15um | | BOW | ≦ 20um | | Conduction Type | N-type | Semi-Insulating | | | Pesistivity (300K) | < 0.5 Ω.cm | > 106 Ω.cm | | | Dislocation Density | Less than 5 x 106 cm-2 | | Useable Surface Area | >90% | | Polishing | Front Surface: Ra<0.2nm. Epi-ready polished | | Back Surface: 1. Fine Ground | | 2. Rough grinded | | Package | Packaged in a class 100 clean room environment, in cassettes of 25pcs or single wafer containers, under a nitrogen atmosphere. |
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