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碳化矽晶片 SiC wafer
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SiC substrate4

SiC substrate (碳化矽晶片)

SiC substrate

2" SiC Specification
Specification Item Grade I Grade II Grade III
1.Surface Orientation on Axis C-plane(0001) ± 0.5 deg.
2. Primary Flat Orientation Perpendicular (11-20) ± 5 deg.
2-1 Primary Flat Length (mm) 15.88 ± 1.65
2-2 Second Flat Orientation 90° CW from Primary flat ± 0.5°
2-3 Second Flat Length (mm) 8 ± 1.65
3.Diameter (mm) 50.8±0.3
4.Thickness 330/430±25 or Customization
5.TTV ≦25 ≦25 ≦25
6.BOW ≦25 ≦25 ≦25
7.WARP ≦25 ≦25 ≦25
8.Micropipe Density (cm-2) <10 <30 <50
9.FWHM <30 arcsec <50 arcsec <70 arcsec
10.Resistivity (Ω.cm) >105 >105 >105
11.Surface finish si face CMP: Ra<0.2 nm CMP: Ra<0.3 nm CMP: Ra<0.5 nm
12.Surface finish c face Customer Spec. Customer Spec. Customer Spec.
13.Usable area >85% >80% >75%