Home ﹥ Products > 矽晶片 Silicon Wafer See Larger Image Silicon P-type (矽晶片) Silicon P-type For LED Bonding Process Specification Item 2” silicon wafer 4” silicon wafer 6” silicon wafer Diameter 50.8 ± 0.4 mm 100 ± 0. 4 mm 150 ± 0. 4 mm Orientation <1-0-0> <1-0-0> <1-0-0> Type P-type P-type P-type Dopant Boron Boron Boron Thickness 430± 20 um 430± 20 um 675± 20 um Resistivity <0.0015 -cm="" strong=""> <0.0015 -cm="" strong=""> <0.0015 -cm="" strong=""> Particle Max. 30 (≧ 0.5µm) ppw Max. 30 (≧ 0.5µm) ppw Max. 30 (≧ 0.5µm) ppw Front Side Surface Polished Polished Polished Back Side Surface Etched Etched Etched See Larger Image Silicon N-type (矽晶片) Silicon N-type For LED Bonding Process Specification Item 2” silicon wafer 4” silicon wafer 6” silicon wafer Diameter 50.8 ± 0.4 mm 100 ± 0. 5 mm 150 ± 0. 5 mm Orientation <1-0-0> <1-0-0> <1-0-0> Type N-type N-type N-type Dopant As or P As or P As or P Thickness 430± 20 um 430± 20 um 675± 20 um Resistivity <0.0015 -cm="" strong=""> <0.0015 -cm="" strong=""> <0.0015 -cm="" strong=""> Particle Max. 30 (≧ 0.5µm) ppw Max. 30 (≧ 0.5µm) ppw Max. 30 (≧ 0.5µm) ppw Front Side Surface Polished Polished Polished Back Side Surface Etched Etched Etched
